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1

Deposition, microstructure and mechanical and tribological properties of magnetron sputtered TiN/TiAlN multilayers

K.N. Andersen, E.J. Bienk, K.O. Schweitz, H. Reitz, J. Chevallier, P. Kringhøj, J. Bøttiger

Journal:

Surface and Coatings Technology

Year:

2000

Language:

english

File:

PDF, 390 KB

english, 2000

2

Anharmonicity of a superconducting qubit with a few-mode Josephson junction

Kringhøj, A., Casparis, L., Hell, M., Larsen, T. W., Kuemmeth, F., Leijnse, M., Flensberg, K., Krogstrup, P., Nygård, J., Petersson, K. D., Marcus, C. M.

Journal:

Physical Review B

Year:

2018

Language:

english

File:

PDF, 876 KB

english, 2018

3

Superconducting gatemon qubit based on a proximitized two-dimensional electron gas

Casparis, Lucas, Connolly, Malcolm R., Kjaergaard, Morten, Pearson, Natalie J., Kringhøj, Anders, Larsen, Thorvald W., Kuemmeth, Ferdinand, Wang, Tiantian, Thomas, Candice, Gronin, Sergei, Gardner, Ge

Journal:

Nature Nanotechnology

Year:

2018

Language:

english

File:

PDF, 2.48 MB

english, 2018

4

Voltage-controlled superconducting quantum bus

Casparis, L., Pearson, N. J., Kringhøj, A., Larsen, T. W., Kuemmeth, F., Nygård, J., Krogstrup, P., Petersson, K. D., Marcus, C. M.

Journal:

Physical Review B

Year:

2019

Language:

english

File:

PDF, 1.28 MB

english, 2019

5

Energy Levels of Zn in Si1—xGex Alloys: The Change-Over from Highly Localized Deep States to Shallow-Level Centers

S. Voss, H. Bracht, N.A. Stolwijk, P. Kringhøj, A. Nylandsted Larsen

Journal:

physica status solidi (b)

Year:

1998

Language:

english

File:

PDF, 154 KB

english, 1998

6

N+-p diodes in InP formed by implantation of Ge+ or Se+ and rapid thermal annealing

Journal:

Materials Science and Engineering: B

Year:

1991

Language:

english

File:

PDF, 250 KB

english, 1991

7

Energy spectra of particles bombarding the cathode in glow discharges

C.V Budtz-Jørgensen, J Bøttiger, P Kringhøj

Journal:

Year:

2000

Language:

english

File:

PDF, 181 KB

english, 2000

8

On glow-discharge sputtering of iron and steels in a commercial deposition plant

P. Kringhøj, C.V. Budtz-Jørgensen, J. Find Nielsen, J. Bøttiger, S.S. Eskildsen, C. Mathiasen

Journal:

Surface and Coatings Technology

Year:

2001

Language:

english

File:

PDF, 285 KB

english, 2001

9

Energetic ion bombardment of the grounded anode in pulsed DC-glow discharges

C.V. Budtz-Jørgensen, J. Bøttiger, P. Kringhøj

Journal:

Surface and Coatings Technology

Year:

2001

Language:

english

File:

PDF, 474 KB

english, 2001

10

The influence of temperature on the microstructure and mechanical properties of sputtered Cr2Nx coatings

P Kringhøj, J Bøttiger, J Chevallier, E.J Bienk, K Rätzke

Journal:

Surface and Coatings Technology

Year:

2002

Language:

english

File:

PDF, 783 KB

english, 2002

11

The critical role of hydrogen for physical sputtering with Ar–H2 glow discharges

C.V. Budtz-Jørgensen, P. Kringhøj, J. Bøttiger

Journal:

Surface and Coatings Technology

Year:

1999

Language:

english

File:

PDF, 220 KB

english, 1999

12

On plasma nitriding of steels

M. Berg, C.V. Budtz-Jørgensen, H. Reitz, K.O. Schweitz, J. Chevallier, P. Kringhøj, J. Bøttiger

Journal:

Surface and Coatings Technology

Year:

2000

Language:

english

File:

PDF, 388 KB

english, 2000

13

Chemical and physical sputtering of aluminium and gold samples using Ar–H2 DC-glow discharges

C.V. Budtz-Jørgensen, P. Kringhøj, J.F. Nielsen, J. Bøttiger

Journal:

Surface and Coatings Technology

Year:

2001

Language:

english

File:

PDF, 361 KB

english, 2001

14

Mössbauer study of defects created by low-fluence In+implantations in InP

P. Kringhøj, G. Weyer

Journal:

Hyperfine Interactions

Year:

1993

Language:

english

File:

PDF, 303 KB

english, 1993

15

Recrystallization of In and P implanted InP

P. Kringhøj, S.Yu. Shiryaev

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1993

Language:

english

File:

PDF, 709 KB

english, 1993

16

Ion implantation of group IV or VI elements for n-type doping of InP

M.C. Ridgway, P. Kringhøj, C.M. Johnson

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1995

Language:

english

File:

PDF, 427 KB

english, 1995

17

Ion-beam induced relaxation of strained GexSi1−x layers

P. Kringhøj, J.M. Glasko, R.G. Elliman

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1995

Language:

english

File:

PDF, 590 KB

english, 1995

18

The residual electrically active damage in ion implanted Si

P. Kringhøj, S. Fatima, J.S. Williams, C. Jagadish

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1995

Language:

english

File:

PDF, 371 KB

english, 1995

19

Recrystallisation of relaxed SiGe alloy layers

P. Kringhøj, R.G. Elliman, M. Fyhn, S.Y. Shiryaev, A. Nylandsted Larsen

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1995

Language:

english

File:

PDF, 461 KB

english, 1995

20

The effect of ion irradiation on the thermal stability of GeSi/Si strained-layer heterostructures

John M. Glasko, Robert G. Elliman, John D. Fitz Gerald, Per Kringhøj

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1997

Language:

english

File:

PDF, 447 KB

english, 1997

21

[IEEE 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings - Canberra, ACT, Australia (8-11 Dec. 1996)] 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings - {111} and (311) rod-like defects in silicon ion implanted silicon

Chou, C.T., Cockayne, D.J.H., Zou, J., Kringhoj, P., Jagadish, C.

Year:

1996

Language:

english

File:

PDF, 501 KB

english, 1996

22

alloy layers

Mesli, A., Kringhøj, P., Nylandsted Larsen, A.

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 295 KB

english, 1997

23

Alloy Layers

Kringhøj, P., Elliman, R. G.

Journal:

Physical Review Letters

Year:

1994

Language:

english

File:

PDF, 277 KB

english, 1994

24

[IEEE 11th International Conference on Ion Implantation Technology - Austin, TX, USA (16-21 June 1996)] Proceedings of 11th International Conference on Ion Implantation Technology - The effect of end of range loops on transient enhanced diffusion in Si

Jones, K.S., Moller, K., Chen, J., Puga-Lambers, M., Law, M., Simons, D.S., Chi, P., Freer, B., Bernstein, J., Rubin, L., Simonton, R., Elliman, R.G., Petravic, M., Kringhoj, P.

Year:

1997

Language:

english

File:

PDF, 429 KB

english, 1997

25

Diffusion of Sb in Strained and Relaxed Si and SiGe

Kringhøj, Per, Larsen, Arne Nylandsted, Shirayev, Sergey Yu.

Journal:

Physical Review Letters

Year:

1996

Language:

english

File:

PDF, 140 KB

english, 1996

26

Anomalous diffusion of tin in silicon

Kringhøj, Per, Larsen, Arne Nylandsted

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 91 KB

english, 1997

27

-type silicon

Budtz-Jørgensen, C. V., Kringhøj, P., Nylandsted Larsen, A., Abrosimov, N. V.

Journal:

Physical Review B

Year:

1998

Language:

english

File:

PDF, 79 KB

english, 1998

28

The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon

Robertson, Lance S., Lilak, Aaron, Law, Mark E., Jones, Kevin S., Kringhoj, Per S., Rubin, Leonard M., Jackson, John, Simons, David S., Chi, Peter

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 286 KB

english, 1997

29

Gold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning Effect

Mesli, A., Kringhøj, P., Larsen, Arne Nylandsted

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 492 KB

1997

30

Rapid Thermal Annealing of Ion Implanted Strained Si1-xGex

Thomsen, E.V., Nylandsted-Larsen, Arne, Hansen, J.L., Kringhøj, P., Shiryaev, S.Y., Weyer, G.

Journal:

Materials Science Forum

Year:

1994

File:

PDF, 355 KB

1994

31

The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP

Weyer, G., Kringhøj, P., Freitag, Kristian

Journal:

Materials Science Forum

Year:

1994

File:

PDF, 326 KB

1994

32

Diffusion of Sb in Si1-xGex-Alloy Layers

Kringhøj, P., Nylandsted-Larsen, Arne

Journal:

Defect and Diffusion Forum

Year:

1997

File:

PDF, 426 KB

1997

33

[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si

Elliman, R.G., Hogg, S.M., Kringhoj, P.

Year:

1998

Language:

english

File:

PDF, 346 KB

english, 1998

34

Annealing of Ion Implanted Tin in Silicon: a RBS/ Channeling, Mössbauer Spectroscopy and Tem Investigation of Solubility and Residual Defects.

Kringhøj, P., Nylandsted Larsen, A., Petersen, J. W.

Journal:

MRS Proceedings

Year:

1989

Language:

english

File:

PDF, 675 KB

english, 1989

35

Amphoteric Behaviour of Ge in InP: A RBS/Channeling and Differential Hall/Resistivity Study

Journal:

MRS Proceedings

Year:

1991

Language:

english

File:

PDF, 326 KB

english, 1991

36

Impurity Profiles in InP from Ion Implantation at Elevated Temperatures

Kringhoj, P., Svensson, B. G.

Journal:

MRS Proceedings

Year:

1991

Language:

english

File:

PDF, 305 KB

english, 1991

37

Rapid Thermal Annealing of InP Implanted with Group IV Eleients

Ridgway, M.C., Kringhoj, P

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 345 KB

english, 1993

38

Solid-Phase Epitaxial Crystallisation Of GexSi1−x Alloy Layers

Elliman, Robert G., Wong, Wah-Chung, Kringhøj, Per

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 1.95 MB

english, 1993

39

The Effect of Strain and Strain-Gradients on the Crystallisation Kinetics of S1−xGex Alloy Layers

Kringhøj, Per, Elliman, Robert G., Hansen, John L.

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 389 KB

english, 1993

40

The Fabrication of High-Speed Electronic Devices by Ion-Beam Synthesis of GexSi1-x Strained Layers

Elliman, R. G., Jiang, H., Wong, W. C., Kringhøj, P.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

41

The Effect Of Ion-Implantation Induced Defects On Strain Relaxation In GexSi1−x/Si Heterostuctures

Glasko, J. M., Zou, J., Cockayne, D. J. H., Gerald, J. Fitz, KringhøJ, P., Elliman, R. G.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 1.99 MB

english, 1996

42

Diffusion in relaxed and strained SiGe layers

Larsen, Arne Nylandsted, Kringhøj, Per

Journal:

Physica Scripta

Year:

1997

Language:

english

File:

PDF, 727 KB

english, 1997